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drain-gate capacitance

См. также в других словарях:

  • Metal gate — A metal gate, in the context of a lateral Metal Oxide Semiconductor MOS stack, is just that the gate material is made from a metal. For decades, the industry had moved away from metal as the gate material in the MOS stack due to fabrication… …   Wikipedia

  • MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up …   Wikipedia

  • Cascode — The cascode is a two stage amplifier composed of a transconductance amplifier followed by a current buffer. Compared to a single amplifier stage, this combination may have one or more of the following advantages: higher input output isolation,… …   Wikipedia

  • Metall-Oxid-Halbleiter-Feldeffekttransistor — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) gehört zu den Feldeffekttransistoren mit isoliertem Gate, auch als IGFET bezeichnet. Er ist den… …   Deutsch Wikipedia

  • High-k dielectric — The term high κ dielectric refers to a material with a high dielectric constant (κ) (as compared to silicon dioxide) used in semiconductor manufacturing processes which replaces the silicon dioxide gate dielectric. The implementation of high κ… …   Wikipedia

  • Nanofluidic circuitry — is a nanotechnology aiming for control of fluids in nanometer scale. Due to the effect of an electrical double layer within the fluid channel, the behavior of nanofluid is observed to be significantly different compared with its microfluidic… …   Wikipedia

  • Ring oscillator — A ring oscillator is a device composed of an odd number of NOT gates whose output oscillates between two voltage levels, representing true and false . The NOT gates, or inverters, are attached in a chain; the output of the last inverter is fed… …   Wikipedia

  • Carrier scattering — Defect types include atom vacancies, adatoms, steps, and kinks which occur most frequently at surfaces due to finite material size causing crystal discontinuity. What all types of defects have in common, whether they be surface or bulk, is that… …   Wikipedia

  • Power MOSFET — A Power MOSFET is a specific type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed to handle large power. Compared to the other power semiconductor devices (IGBT, Thyristor...), its main advantages are high commutation speed …   Wikipedia

  • Common source — Figure 1: Basic N channel JFET common source circuit (neglecting biasing details). Figure 2: Basic N channel JFET common source circuit with source degeneration …   Wikipedia

  • CMOS — For other uses, see CMOS (disambiguation). CMOS inverter (NOT logic gate) Complementary metal–oxide–semiconductor (CMOS) (   …   Wikipedia

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